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TSMC N2 (2 nm)
Technology
Process Node
Gate-all-around arrives: volume production from late 2025.
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N2 is TSMC's first gate-all-around nanosheet node, entering volume production in late 2025 with reported record tape-out demand — the process the 2027 accelerator generation will compete for. A16, with backside power delivery, follows in late 2026.
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Record reviewed as of 2026-01-15 — see Methodology.